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vishay TSOP361.. document number 82191 rev. 1, 28-may-03 vishay semiconductors www.vishay.com 1 16797 1 2 3 4 ir receiver modules for remote control systems description the TSOP361.. - series are miniaturized smd-ir receiver modules for infrared remote control sys- tems. pin diode and preamplifier are assembled on lead frame, the epoxy package is designed as ir fil- ter. the demodulated output signal can directly be decoded by a microprocessor. the main benefit is the operation with short burst transmission codes and high data rates at a supply voltage of 3 v. features ? photo detector and preamplifier in one package internal filter for pcm frequency continuous data transmission possible ttl and cmos compatibility output active low supply voltage range: 2.7 v to 5.5 v special features enhanced data rate up to 4000 bit/s operation with short burst possible ( 6 cycles/burst) taping available for topview and sideview assembly mechanical data pinning: 1 = gnd, 2 = gnd, 3 = v s , 4 = out parts table block diagram application circuit part carrier frequency TSOP36130 30 khz TSOP36133 33 khz TSOP36136 36 khz TSOP36137 36.7 khz TSOP36138 38 khz TSOP36140 40 khz TSOP36156 56 khz 30 k ? v s out demo- gnd pass agc input pin band dulator control circuit 3 4 1;2 16839 c 1 = 4.7 f hsxxxx out gnd circuit c r 1 =100 ? +v s gnd transmitter with tsalxxxx v s r 1 +c 1 recommended to suppress power supply disturbances. v o the output voltage should not be hold continuously at a voltage below v o = 2.0 v by the external circuit. 17403
www.vishay.com 2 document number 82191 rev. 1, 28-may-03 vishay TSOP361.. vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified electrical and optical characteristics t amb = 25 c, unless otherwise specified parameter te s t c o n d i t i o n symbol va lu e unit supply voltage pin 3 v s - 0.3 to + 6.0 v supply current pin 3 i s 3 ma output voltage pin 4 v o - 0.3 to (v s + 0.3) v output current pin 4 i o 10 ma junction temperature t j 100 c storage temperature range t stg - 40 to + 100 c operating temperature range t amb - 25 to + 85 c power consumption t amb 85 c p tot 30 mw parameter test condition symbol min typ. max unit supply current e v = 0 i sd 0.7 1.2 1.5 ma e v = 40 klx, sunlight i sh 1.3 ma supply voltage v s 2.7 5.5 v transmission distance e v = 0, test signal see fig.1, ir diode tsal6200, i f = 400 ma d 35 m output voltage low i osl = 0.5 ma, e e = 0.7 mw/m 2 , test signal see fig. 1 v osl 250 mv irradiance (30-40 khz) v s = 3 v pulse width tolerance: t pi - 5/f o < t po < t pi + 6/f o , test signal see fig.3 e e min 0.35 0.5 mw/m 2 irradiance (56 khz) v s = 3 v pulse width tolerance: t pi - 5/f o < t po < t pi + 6/f o , test signal see fig.3 e e min 0.4 0.6 mw/m 2 irradiance (30-40 khz) v s = 5 v pulse width tolerance: t pi - 5/f o < t po < t pi + 6/f o , test signal see fig.3 e e min 0.45 0.6 mw/m 2 irradiance (56 khz) v s = 5 v pulse width tolerance: t pi - 5/f o < t po < t pi + 6/f o , test signal see fig.3 e e min 0.5 0.7 mw/m 2 irradiance t pi - 5/f o < t po < t pi + 6/f o , test signal see fig. 3 e e max 30 w/m 2 directivity angle of half transmission distance ? 1/2 45 deg
vishay TSOP361.. document number 82191 rev. 1, 28-may-03 vishay semiconductors www.vishay.com 3 typical characteristics (t amb = 25 c unless otherwise specified) figure 1. output function figure 2. pulse length and sensitivity in dark ambient figure 3. output function e e t t pi *) t v o v oh v ol t po 2) t 14337 optical test signal (ir diode tsal6200, i f =0.4 a, n=6 pulses, f=f 0 , t=10 ms) output signal t d 1) 1) 3/f 0 < t d < 9/f 0 2) t pi ? 4/f 0 < t po < t pi + 6/f 0 *) t pi 6/fo is recommended for optimal function t ? output pulse width ( ms ) 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.1 1.0 10.0 100.0 1000.010000.0 e e ? irradiance ( mw/m 2 ) 16907 po input burst duration = 950 nm, optical test signal, fig.1 output pulse e e t v o v oh v ol t 600 s 600 s t = 60 ms t on t off 94 8134 optical t est signal output signal , ( see fig.4 ) figure 4. output pulse diagram figure 5. frequency dependence of responsivity figure 6. sensitivity in bright ambient t ,t ? output pulse width ( ms ) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 1.0 10.0 100.0 1000.010000.0 e e ? irradiance ( mw/m 2 ) 16910 to ff = 950 nm, optical test signal, fig.3 to n on off 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.7 0.9 1.1 1.3 f/f 0 ? relative frequency 16926 f = f 0 5% f ( 3db ) = f 0 /7 e / e ? rel. responsivity e min e 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.01 0.10 1.00 10.00 100.00 e ? ambient dc irradiance (w/m 2 ) 16911 correlation with ambient light sources: 10w/m 2 1.4klx (std.illum.a,t=2855k) 10w/m 2 8.2klx (daylight,t=5900k) ambient, = 950 nm e ? threshold irradiance ( mw/m ) e min 2
www.vishay.com 4 document number 82191 rev. 1, 28-may-03 vishay TSOP361.. vishay semiconductors figure 7. sensitivity vs. supply voltage disturbances figure 8. sensitivity vs. electric field disturbances figure 9. max. envelope duty cycle vs. burstlength 0.0 0.5 1.0 1.5 2.0 0.1 1.0 10.0 100.0 1000.0 v srms ? ac voltage on dc supply voltage (mv) 16912 f = f o f = 10 khz e ? threshold irradiance ( mw/m ) e min 2 f = 1 khz f = 100 hz e ? threshold irradiance ( mw/m ) 0.0 0.4 0.8 1.2 1.6 0.0 0.4 0.8 1.2 2.0 e ? field strength of disturbance ( kv/m ) 2.0 94 8147 1.6 e min 2 f(e) = f 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 20 40 60 80 100 120 burst length ( number of cycles / burst ) 16914 f = 38 khz, e e = 2 mw/m 2 max. envelope duty cycle figure 10. sensitivity vs. ambient temperature figure 11. relative spectral sensitivity vs. wavelength figure 12. directivity 0.0 0.1 0.2 0.3 0.4 0.5 0.6 ?30?150 153045607590 t amb ? ambient temperature ( q c ) 16918 sensitivity in dark ambient e ? threshold irradiance ( mw/m ) e min 2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 750 850 950 1050 1150 ? wavelength ( nm ) 16919 s ( ) ? relative spectral sensitivity rel 16801 0.4 0.2 0 0.2 0.4 0.6 0.6 0.9 0 q 30 q 10 q 20 q 40 q 50 q 60 q 70 q 80 q 1.0 0.8 0.7 d rel C relative transmission distance
vishay TSOP361.. document number 82191 rev. 1, 28-may-03 vishay semiconductors www.vishay.com 5 suitable data format the circuit of the TSOP361.. is designed in that way that unexpected output pulses due to noise or distur- bance signals are avoided. a bandpass filter, an inte- grator stage and an automatic gain control are used to suppress such disturbances. the distinguishing mark between data signal and dis- turbance signal are carrier frequency, burst length and duty cycle. the data signal should fulfill the following conditions: carrier frequency should be close to center fre- quency of the bandpass (e.g. 38 khz). burst length should be 6 cycles/burst or longer. after each burst which is between 6 cycles and 70 cycles a gap time of at least 10 cycles is necessary. for each burst which is longer than 1.8 ms a corre- sponding gap time is necessary at some time in the data stream. this gap time should be at least 6 times longer than the burst. up to 2200 short bursts per second can be received continuously. some examples for suitable data format are: nec code, toshiba micom format, sharp code, rc5 code, rc6 code, rcmm code, r-2000 code, recs-80 code. when a disturbance signal is applied to the TSOP361.. it can still receive the data signal. how- ever the sensitivity is reduced to that level that no unexpected pulses will occur. some examples for such disturbance signals which are suppressed by the TSOP361.. are: dc light (e.g. from tungsten bulb or sunlight) continuous signal at 38 khz or at any other fre- quency signals from fluorescent lamps with electronic bal- last (an example of the signal modulation is in the fig- ure below). figure 13. sensitivity vs. supply voltage 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 v s ? supply voltage ( v ) 17185 e ? sensitivity ( mw/m ) 2 e min figure 14. ir signal from fluorescent lamp with low modulation 0 5 10 15 20 time ( ms ) 16920 ir signal ir signal from fluorescent lamp with low modulation
www.vishay.com 6 document number 82191 rev. 1, 28-may-03 vishay TSOP361.. vishay semiconductors package dimensions in mm 16629
vishay TSOP361.. document number 82191 rev. 1, 28-may-03 vishay semiconductors www.vishay.com 7 taping version TSOP361..tt 16584
www.vishay.com 8 document number 82191 rev. 1, 28-may-03 vishay TSOP361.. vishay semiconductors taping version TSOP361..tr 16585
vishay TSOP361.. document number 82191 rev. 1, 28-may-03 vishay semiconductors www.vishay.com 9 reel dimensions 16734
www.vishay.com 10 document number 82191 rev. 1, 28-may-03 vishay TSOP361.. vishay semiconductors leader and trailer cover tape peel strength according to din en 60286-3 0.1 to 1.3 n 300 10 mm/min 165 - 180 peel angle label standard bar code labels for finished goods the standard bar code labels are product labels and used for identification of goods. the finished goods are packed in final packing area. the standard pack- ing units are labeled with standard bar code labels before transported as finished goods to warehouses. the labels are on each packing unit and contain vishay semiconductor gmbh specific data. trailer leader no devices no devices min. 200 min. 400 start end devices 96 11818
vishay TSOP361.. document number 82191 rev. 1, 28-may-03 vishay semiconductors www.vishay.com 11 dry packing the reel is packed in an anti-humidity bag to protect the devices from absorbing moisture during transpor- tation and storage. final packing the sealed reel is packed into a cardboard box. a secondary cardboard box is used for shipping pur- poses. item-description item-number selection-code lot-/ serial-number data-code plant-code quantity accepted by: packed by: mixed code indicator origin ino ? batch sel cod ptc qty acc pck mixed code xxxxxxx + 18 8 3 10 3 (yww) 2 8 ? ? ? company logo plain writing abbreviation length item-number sequence-number plant-code quantity total length n8 2 3 8 21 long bar code top type length n x n ? selection?code batch-number data-code filter total length x3 3 10 1 17 short bar code bottom type length n x ? ? 16942 vishay semiconductor gmbh standard bar code product label (finished goods) aluminium bag label reel 15973
www.vishay.com 12 document number 82191 rev. 1, 28-may-03 vishay TSOP361.. vishay semiconductors recommended method of storage dry box storage is recommended as soon as the alu- minium bag has been opened to prevent moisture absorption. the following conditions should be observed, if dry boxes are not available: storage temperature 10 c to 30 c storage humidity 60 % rh max. after more than 72 hours under these conditions moisture content will be too high for reflow soldering. in case of moisture absorption, the devices will recover to the former condition by drying under the following condition: 192 hours at 40 c + 5 c/ -0 c and < 5 % rh (dry air/ nitrogen) or 96 hours at 60 c +5 c and < 5 % rh for all device containers or 24 hours at 125 c +5 c not suitable for reel or tubes. an eia jedec standard jesd22-a112 level 4 label is included on all dry bags. example of jesd22-a112 level 4 label esd precaution proper storage and handling procedures should be followed to prevent esd damage to the devices espe- cially when they are removed from the antistatic shielding bag. electro-static sensitive devices warn- ing labels are on the packaging. vishay semiconductors standard bar-code labels the vishay semiconductors standard bar-code labels are printed at final packing areas. the labels are on each packing unit and contain vishay telefunken specific data. assembly instructions reflow soldering reflow soldering must be done within 72 hours stored under max. 30 c, 60 % rh after opening envelop recommended soldering paste (composition: sn 63 %, pb 37 %) melting temperature 178 c to 192 c apply solder paste to the specified soldering pads, by using a dispenser or by screen printing. recommended thickness of metal mask is 0.2 mm for screen printing. the recommended reflow furnace is a combination- type with upper and lower heaters. set the furnace temperatures for pre-heating and heating in accordance with the reflow temperature profile as shown below. excercise extreme care to keep the maximum temperature below 230 c. the following temperature profile means the tempera ture at the device surface. since temperature differ ence occurs between the work and the surface of the circuit board depending on the pes of circuit board or reflow furnace, the operating conditions should be verified prior to start of operation. handling after reflow should be done only after the work surface has been cooled off. manual soldering use the 6/4 solder or the solder containing silver. use a soldering iron of 25 w or smaller. adjust the temperature of the soldering iron below 300 c. finish soldering within three seconds. handle products only after the temperature is cooled off. cleaning perform cleaning after soldering strictly in conform- ance to the following conditions: cleaning agent: 2-propanol (isopropyl alcohol) commercially available grades (industrial use) should be used. 16943 16962
vishay TSOP361.. document number 82191 rev. 1, 28-may-03 vishay semiconductors www.vishay.com 13 demineralized or distilled water having a resistivity of not less than 500 m ? corresponding to a conductivity of 2 ms/m. temperature and time: 30 seconds under the tem- perature below 50 c or 3 minutes below 30 c. ultrasonic cleaning: below 20 w. reflow solder profile 10 s max. @ 230 q c 90 s max 0 20 40 60 80 100 120 140 160 180 200 220 240 0 50 100 150 200 250 300 350 time ( s ) temperature ( c ) 16944 q 2 q c - 4 q c/s 120 s - 180 s 2 q c - 4 q c/s
www.vishay.com 14 document number 82191 rev. 1, 28-may-03 vishay TSOP361.. vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423

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